p p j u 4na 9 0 / pj d 4 na 9 0 / pj p 4 na 9 0 / pj f 4na 9 0 april 21,2015 - rev.00 page 1 9 00 v n - c hannel mosfet v oltage 9 0 0 v c urrent 4 a ito - 220ab - f to - 220ab to - 252aa to - 251aa f eatures ? r ds(on) , v gs @10v,i d @ 2 a < 3.4 ? high switching speed ? impr oved dv/dt capability ? low gate charge ? low reverse transfer capacitance ? lead free in compliance wit h eu rohs 2011/65/eu directive . ? green molding compound as per iec61249 std. (halogen free) m echanical data ? case: to - 251aa , to - 252aa ,to - 220ab, ito - 220ab - f package ? terminals : solderable per mil - std - 750, method 2026 ? to - 251aa approx. weight : 0.0104 ounces, 0.297 grams ? to - 252aa approx. weight : 0.0104 ounces, 0.297 grams ? to - 220ab approx. weight : 0.065 ounces, 1.859 grams ? ito - 220ab - f approx. weight : 0.068 oun ces, 1.945 grams m aximum r atings and t hermal c haracteristics (t a =25 o c unless otherwise noted) parameter symbol to - 251aa to - 220ab ito - 220ab - f to - 252aa units drain - source voltage v ds 9 00 v gate - source voltage v gs + 30 v continuous drain current i d 4 a pulsed drain current i dm 16 a single pulse avalanche energy (note 1 ) e as 344 mj power dissipation t c =25 o c p d 90 1 4 0 44 90 w derate above 25 o c 0.7 2 1.12 0. 35 0.7 2 w/ o c operating junction and storage temperature range t j ,t stg - 55~150 o c typi cal thermal resistance - junction to case - j unction to ambient r jc ja 1.39 110 0. 8 9 62.5 2.84 120 1.39 110 o c /w ? limited only by maximum junction temperature
p p j u 4na 9 0 / pj d 4 na 9 0 / pj p 4 na 9 0 / pj f 4na 9 0 april 21,2015 - rev.00 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test c ondition min. typ. max. units static drain - source breakdown voltage bv dss v gs =0v,i d =250ua 9 00 - - v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 2 - 4 v drain - source on - state resistance r ds(on) v gs =10v,i d = 2 a - 2 . 7 3. 4 dss v ds = 9 00v,v gs =0v - 0.03 1 .0 ua gate - source leakage current i gss v gs = + 30 v,v ds =0v - + 10 + 100 na diode forward voltage v sd i s = 4 a,v gs =0v - - 1.4 v dynamic (note 4 ) total gate charge q g v ds = 72 0 v, i d = 4 a, v gs = 10 v (note 2 , 3 ) - 17 - nc gate - source cha rge q gs - 4.1 - gate - drain charge q gd - 7.6 - input capacitance ciss v ds =25v, v gs =0v, f=1.0mhz - 710 - pf output capacitance coss - 82 - reverse transfer capacitance crss - 5 - turn - on delay time td (on) v dd = 4 5 0 v, i d = 4 a, r g = 25 (note 2 , 3 ) - 1 5 - ns turn - on rise time t r - 27 - turn - off delay time td (off) - 40 - turn - off fall time t f - 2 9 - drain - source diode maximum continuous drain - source diode forward current i s --- - - 4 a maximum pulsed drain - source diode forwa rd current i sm --- - - 16 a reverse recovery time trr v gs =0v, i s = 4 a di f / dt=100a/us (note 2 ) - 540 - ns reverse recovery charge qrr - 2 .6 - uc notes : 1. l=30mh, i as = 4.7 a, v dd = 5 0 v, r g = 2 5 ohm, starting t j =25 o c 2. pulse width < 300us, duty cycle < 2% 3. essentially independent of operating temperature typical characteristics . 4. guaranteed by design, not subject to product ion testing
p p j u 4na 9 0 / pj d 4 na 9 0 / pj p 4 na 9 0 / pj f 4na 9 0 april 21,2015 - rev.00 page 3 t ypical characteristic curves fig.1 output characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. dr ain current fig. 4 on - resistance vs. junction temperature fig. 5 capacitance vs. drain - source voltage fig. 6 source - drain diode forward voltage
p p j u 4na 9 0 / pj d 4 na 9 0 / pj p 4 na 9 0 / pj f 4na 9 0 april 21,2015 - rev.00 page 4 t ypical characteristic curves fig. 7 gate charge fig. 8 bv dss vs. junction temperat ure fig. 9 threshold voltage variation with temperature fig. 10 maximum safe operating area fig. 11 maximum safe operating area fig. 1 2 maximum safe operating area
p p j u 4na 9 0 / pj d 4 na 9 0 / pj p 4 na 9 0 / pj f 4na 9 0 april 21,2015 - rev.00 page 5 t ypical characteristic curves fig. 13 pju/pjd normalized transi ent thermal impedance vs. pulse width fig. 14 pjp4 na9 0 normalized transient thermal impedance vs. pulse width fig. 15 pjf4na9 0 normalized transient thermal impedance vs. pulse width
p p j u 4na 9 0 / pj d 4 na 9 0 / pj p 4 na 9 0 / pj f 4na 9 0 april 21,2015 - rev.00 page 6 packaging information . i to - 220ab - f dimension u nit: mm to - 220 ab dimension u nit: mm to - 252aa dimension u nit: mm to - 251aa dimension u nit: mm
p p j u 4na 9 0 / pj d 4 na 9 0 / pj p 4 na 9 0 / pj f 4na 9 0 april 21,2015 - rev.00 page 7 part no packing code version part n o packing code package type packing type marking ver sion pj u4na90 _t0_0000 1 to - 251aa 80pcs / tube u4na90 halogen free pjd4na90_l2_00001 to - 252aa 3,000pcs / 13
p p j u 4na 9 0 / pj d 4 na 9 0 / pj p 4 na 9 0 / pj f 4na 9 0 april 21,2015 - rev.00 page 8 disclaimer
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